Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

10.1016/S0039-6028(03)00535-1

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Bibliographic Details
Main Authors: Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Subjects:
Growth
Indium phosphide
Molecular beam epitaxy
Semiconducting surfaces
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107167
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/107167

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