Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy
10.1016/S0039-6028(03)00535-1
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sg-nus-scholar.10635-1071672023-10-27T08:29:51Z Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy Barnes, G.W. Tok, E.S. Neave, J.H. Jones, T.S. MATERIALS SCIENCE Growth Indium phosphide Molecular beam epitaxy Semiconducting surfaces 10.1016/S0039-6028(03)00535-1 Surface Science 531 3 L383-L387 SUSCA 2014-10-29T08:40:24Z 2014-10-29T08:40:24Z 2003-06-01 Article Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S. (2003-06-01). Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy. Surface Science 531 (3) : L383-L387. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(03)00535-1 00396028 http://scholarbank.nus.edu.sg/handle/10635/107167 000183254900005 Scopus |
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Growth Indium phosphide Molecular beam epitaxy Semiconducting surfaces |
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Growth Indium phosphide Molecular beam epitaxy Semiconducting surfaces Barnes, G.W. Tok, E.S. Neave, J.H. Jones, T.S. Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
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10.1016/S0039-6028(03)00535-1 |
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MATERIALS SCIENCE |
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MATERIALS SCIENCE Barnes, G.W. Tok, E.S. Neave, J.H. Jones, T.S. |
format |
Article |
author |
Barnes, G.W. Tok, E.S. Neave, J.H. Jones, T.S. |
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Barnes, G.W. |
title |
Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
title_short |
Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
title_full |
Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
title_fullStr |
Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
title_full_unstemmed |
Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
title_sort |
phosphorus incorporation during inp(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/107167 |
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1781788348778545152 |