Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. S...

by Tok, E.S., Neave, J.H., Zhang, J.
Published 2014

Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

by Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S.
Published 2014

Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries

by Tok, E.S., Zhang, J., Kamiya, I., Xie, M.H., Neave, J.H., Joyce, B.A.
Published 2014