Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

10.1016/S0039-6028(02)01918-0

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Bibliographic Details
Main Authors: Tok, E.S., Neave, J.H., Zhang, J.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Subjects:
Epitaxy
Gallium arsenide
Low index single crystal surfaces
Reflection high-energy electron diffraction (RHEED)
Scanning tunneling microscopy
Semiconducting surfaces
Online Access:http://scholarbank.nus.edu.sg/handle/10635/106986
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/106986

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