$Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]$

Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

10.1016/S0039-6028(02)01918-0

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Bibliographic Details
Main Authors:	Tok, E.S., Neave, J.H., Zhang, J.
Other Authors:	MATERIALS SCIENCE
Format:	Article
Published:	2014
Subjects:	Epitaxy Gallium arsenide Low index single crystal surfaces Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/106986
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-106986
record_format	dspace
spelling	sg-nus-scholar.10635-1069862024-11-15T07:04:48Z Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286] Tok, E.S. Neave, J.H. Zhang, J. MATERIALS SCIENCE Epitaxy Gallium arsenide Low index single crystal surfaces Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces 10.1016/S0039-6028(02)01918-0 Surface Science 515 1 263-265 SUSCA 2014-10-29T08:37:56Z 2014-10-29T08:37:56Z 2002-08 Article Tok, E.S., Neave, J.H., Zhang, J. (2002-08). Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]. Surface Science 515 (1) : 263-265. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(02)01918-0 00396028 http://scholarbank.nus.edu.sg/handle/10635/106986 000177735900030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Epitaxy Gallium arsenide Low index single crystal surfaces Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces
spellingShingle	Epitaxy Gallium arsenide Low index single crystal surfaces Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces Tok, E.S. Neave, J.H. Zhang, J. Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
description	10.1016/S0039-6028(02)01918-0
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE Tok, E.S. Neave, J.H. Zhang, J.
format	Article
author	Tok, E.S. Neave, J.H. Zhang, J.
author_sort	Tok, E.S.
title	Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
title_short	Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
title_full	Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
title_fullStr	Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
title_full_unstemmed	Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
title_sort	comment on "a new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of gaas(1 1 1)a thin films" [surf. sci. 459 (2000) 277-286]
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/106986
_version_	1821182356223950848

Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

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