Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]
10.1016/S0039-6028(02)01918-0
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/106986 |
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| Institution: | National University of Singapore |