An approach to thin film oxide detection in GaAs substrate using Goos-Hanchen shift

• المؤلفون الرئيسيون: Operaña, Jared Joshua C., Simon, Rhenish C., Hermosa, Nathaniel P., II
• التنسيق: text
• منشور في: Animo Repository 2020
• الموضوعات: Thin films; Gallium arsenide; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/11581
• المؤسسة: De La Salle University

Commercial GaAs substrates form a thin layer of As2O3 when exposed to room conditions. The formation of As2O3 can introduce undesired experimental deviations in optical experiments, as well as in the deposition of thin films involving GaAs substrates. In this paper we perform a calculation to compar...