Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

10.1186/1556-276X-8-59

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Bibliographic Details
Main Authors: Lee, S.Y, Yoon, S.F, Ngo, A.C.Y, Guo, T
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: SpringerOpen 2020
Subjects:
Annealing
Bias voltage
Energy utilization
Gallium arsenide
III-V semiconductors
Indium arsenide
Interdiffusion (solids)
Light absorption
Nanocrystals
Semiconducting gallium
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconductor quantum dots
Annealing temperatures
As-grown
Extinction ratios
Lumped element
On-chip integration
Reverse bias voltage
Electroabsorption modulators
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183906
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/183906

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