Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

10.1186/1556-276X-8-59

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Main Authors:	Lee, S.Y, Yoon, S.F, Ngo, A.C.Y, Guo, T
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	SpringerOpen 2020
Subjects:	Annealing Bias voltage Energy utilization Gallium arsenide III-V semiconductors Indium arsenide Interdiffusion (solids) Light absorption Nanocrystals Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Annealing temperatures As-grown Extinction ratios Lumped element On-chip integration Reverse bias voltage Electroabsorption modulators
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183906
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1839062024-04-25T03:33:23Z Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators Lee, S.Y Yoon, S.F Ngo, A.C.Y Guo, T ELECTRICAL AND COMPUTER ENGINEERING Annealing Bias voltage Energy utilization Gallium arsenide III-V semiconductors Indium arsenide Interdiffusion (solids) Light absorption Nanocrystals Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Annealing temperatures As-grown Extinction ratios Lumped element On-chip integration Reverse bias voltage Electroabsorption modulators 10.1186/1556-276X-8-59 Nanoscale Research Letters 8 1 1-Jul 2020-11-23T08:58:57Z 2020-11-23T08:58:57Z 2013 Article Lee, S.Y, Yoon, S.F, Ngo, A.C.Y, Guo, T (2013). Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators. Nanoscale Research Letters 8 (1) : 1-Jul. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-8-59 1931-7573 https://scholarbank.nus.edu.sg/handle/10635/183906 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ SpringerOpen Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Annealing Bias voltage Energy utilization Gallium arsenide III-V semiconductors Indium arsenide Interdiffusion (solids) Light absorption Nanocrystals Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Annealing temperatures As-grown Extinction ratios Lumped element On-chip integration Reverse bias voltage Electroabsorption modulators
spellingShingle	Annealing Bias voltage Energy utilization Gallium arsenide III-V semiconductors Indium arsenide Interdiffusion (solids) Light absorption Nanocrystals Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Annealing temperatures As-grown Extinction ratios Lumped element On-chip integration Reverse bias voltage Electroabsorption modulators Lee, S.Y Yoon, S.F Ngo, A.C.Y Guo, T Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
description	10.1186/1556-276X-8-59
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Lee, S.Y Yoon, S.F Ngo, A.C.Y Guo, T
format	Article
author	Lee, S.Y Yoon, S.F Ngo, A.C.Y Guo, T
author_sort	Lee, S.Y
title	Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
title_short	Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
title_full	Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
title_fullStr	Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
title_full_unstemmed	Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
title_sort	effects of annealing on performances of 1.3-?m inas-ingaas-gaas quantum dot electroabsorption modulators
publisher	SpringerOpen
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183906
_version_	1800914731366612992

Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

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