Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators

10.1186/1556-276X-8-59

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Bibliographic Details
Main Authors:	Lee, S.Y, Yoon, S.F, Ngo, A.C.Y, Guo, T
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	SpringerOpen 2020
Subjects:	Annealing Bias voltage Energy utilization Gallium arsenide III-V semiconductors Indium arsenide Interdiffusion (solids) Light absorption Nanocrystals Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Annealing temperatures As-grown Extinction ratios Lumped element On-chip integration Reverse bias voltage Electroabsorption modulators
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183906
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Institution:	National University of Singapore

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Summary:	10.1186/1556-276X-8-59