Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
10.1186/1556-276X-8-59
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Main Authors: | Lee, S.Y, Yoon, S.F, Ngo, A.C.Y, Guo, T |
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Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Article |
Published: |
SpringerOpen
2020
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Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/183906 |
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Institution: | National University of Singapore |
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