Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

• Main Authors: De Los Reyes, Alexander, Prieto, Elizabeth Ann, Omambac, Karim, Porquez, Jeremy, Lopez, Lorenzo P., Jr., Gonzales, Karl Cedric, Vasquez, John Daniel, Tumanguil, Mae Agatha, Muldera, Joselito, Yamamoto, Kohji, Tani, Masahiko, Somintac, Armando, Estacio, Elmer, Salvador, Arnel A.
• Format: text
• Published: Animo Repository 2017
• Subjects: Gallium arsenide; Molecular beam epitaxy; Terahertz spectroscopy; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/6192
• Institution: De La Salle University

We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. F...