Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

• المؤلفون الرئيسيون: De Los Reyes, Alexander, Prieto, Elizabeth Ann, Omambac, Karim, Porquez, Jeremy, Lopez, Lorenzo P., Gonzales, Karl Cedric, Vasquez, John Daniel, Tumanguil, Mae Agatha, Joselito, Joselito, Yamamoto, Kohji, Tani, Masahiko, Somintac, Armando, Estacio, Elmer, Salvador, Arnel
• التنسيق: text
• منشور في: Animo Repository 2017
• الموضوعات: Gallium arsenide; Molecular beam epitaxy; Terahertz spectroscopy; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/3297
• المؤسسة: De La Salle University

We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. F...