Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. F...

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Bibliographic Details
Main Authors:	De Los Reyes, Alexander, Prieto, Elizabeth Ann, Omambac, Karim, Porquez, Jeremy, Lopez, Lorenzo P., Gonzales, Karl Cedric, Vasquez, John Daniel, Tumanguil, Mae Agatha, Joselito, Joselito, Yamamoto, Kohji, Tani, Masahiko, Somintac, Armando, Estacio, Elmer, Salvador, Arnel
Format:	text
Published:	Animo Repository 2017
Subjects:	Gallium arsenide Molecular beam epitaxy Terahertz spectroscopy Physics
Online Access:	https://animorepository.dlsu.edu.ph/faculty_research/3297
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Institution:	De La Salle University

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