Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

• Main Authors: Sadia, Cyril P., Muldera, Joselito E., Estacio, Elmer S., Somintac, Armando S., Salvador, Arnel A., Que, Christopher T., Ymamoto, Kohji, Tano, Masahiko
• Format: text
• Published: Animo Repository 2015
• Subjects: Molecular beam epitaxy; Gallium arsenide; Terahertz spectroscopy; Thin films; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/8130
• Institution: De La Salle University

We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensi...