Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

• Main Authors: Sadia, Cyril P., Muldera, Joselito E., Estacio, Elmer S., Somintac, Armando S., Salvador, Arnel A., Que, Christopher T., Ymamoto, Kohji, Tano, Masahiko
• Format: text
• Published: Animo Repository 2015
• Subjects: Molecular beam epitaxy; Gallium arsenide; Terahertz spectroscopy; Thin films; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/8130
• Institution: De La Salle University

We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 µm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs.