Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

• المؤلفون الرئيسيون: Sadia, Cyril P, Lopez, Lorenzo P, Jr, Delos Santos, Ramon M, Muldera, Joselito E, De Los Reyes, Alexander E, Tumanguil, Mae Agatha C, Que, Christopher T, Magusara, Valynn Katrine, Tani, Masahiko, Somintac, Armando S, Estacio, Elmer S, Salvado, Arnel A
• التنسيق: text
• منشور في: Archīum Ateneo 2018
• الموضوعات: Molecular beam epitaxy; III-V semiconductors; Indium arsenide; Terahertz; Physics
• الوصول للمادة أونلاين: https://archium.ateneo.edu/physics-faculty-pubs/52; https://www.sciencedirect.com/science/article/abs/pii/S0040609017309276

We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial gr...