Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film....

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Bibliographic Details
Main Authors: Que, Christopher T., Edamura, Tadataka, Nakajima, M, Tani, Masahiko, Hangyo, Masanori
Format: text
Published: Animo Repository 2009
Subjects:
Terahertz technology
Indium arsenide
Femtosecond lasers
Physics
Semiconductor and Optical Materials
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/11910
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Institution: De La Salle University

Internet

https://animorepository.dlsu.edu.ph/faculty_research/11910

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