Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

• المؤلفون الرئيسيون: Que, Christopher T., Edamura, Tadataka, Nakajima, M, Tani, Masahiko, Hangyo, Masanori
• التنسيق: text
• منشور في: Animo Repository 2009
• الموضوعات: Terahertz technology; Indium arsenide; Femtosecond lasers; Physics; Semiconductor and Optical Materials
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/11910
• المؤسسة: De La Salle University

Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film....