Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film....

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Main Authors: Que, Christopher T., Edamura, Tadataka, Nakajima, M, Tani, Masahiko, Hangyo, Masanori
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Published: Animo Repository 2009
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Online Access:https://animorepository.dlsu.edu.ph/faculty_research/11910
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Institution: De La Salle University
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-143662024-05-16T07:09:26Z Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses Que, Christopher T. Edamura, Tadataka Nakajima, M Tani, Masahiko Hangyo, Masanori Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film. Comparison of the emission from a 520 nm film and of bulk GaAs in reflection geometry reveals that the main THz radiation mechanism is the photo-Dember effect. Moreover, comparing the emission from bulk InAs, the thin films can also be categorized as strong THz emitters. 2009-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/11910 info:doi/10.1143/JJAP.48.010211 Faculty Research Work Animo Repository Terahertz technology Indium arsenide Femtosecond lasers Physics Semiconductor and Optical Materials
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Terahertz technology
Indium arsenide
Femtosecond lasers
Physics
Semiconductor and Optical Materials
spellingShingle Terahertz technology
Indium arsenide
Femtosecond lasers
Physics
Semiconductor and Optical Materials
Que, Christopher T.
Edamura, Tadataka
Nakajima, M
Tani, Masahiko
Hangyo, Masanori
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
description Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film. Comparison of the emission from a 520 nm film and of bulk GaAs in reflection geometry reveals that the main THz radiation mechanism is the photo-Dember effect. Moreover, comparing the emission from bulk InAs, the thin films can also be categorized as strong THz emitters.
format text
author Que, Christopher T.
Edamura, Tadataka
Nakajima, M
Tani, Masahiko
Hangyo, Masanori
author_facet Que, Christopher T.
Edamura, Tadataka
Nakajima, M
Tani, Masahiko
Hangyo, Masanori
author_sort Que, Christopher T.
title Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
title_short Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
title_full Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
title_fullStr Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
title_full_unstemmed Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
title_sort terahertz radiation from inas films on silicon substrates excited by femtosecond laser pulses
publisher Animo Repository
publishDate 2009
url https://animorepository.dlsu.edu.ph/faculty_research/11910
_version_ 1800918856543240192