Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film....
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oai:animorepository.dlsu.edu.ph:faculty_research-143662024-05-16T07:09:26Z Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses Que, Christopher T. Edamura, Tadataka Nakajima, M Tani, Masahiko Hangyo, Masanori Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film. Comparison of the emission from a 520 nm film and of bulk GaAs in reflection geometry reveals that the main THz radiation mechanism is the photo-Dember effect. Moreover, comparing the emission from bulk InAs, the thin films can also be categorized as strong THz emitters. 2009-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/11910 info:doi/10.1143/JJAP.48.010211 Faculty Research Work Animo Repository Terahertz technology Indium arsenide Femtosecond lasers Physics Semiconductor and Optical Materials |
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Terahertz technology Indium arsenide Femtosecond lasers Physics Semiconductor and Optical Materials Que, Christopher T. Edamura, Tadataka Nakajima, M Tani, Masahiko Hangyo, Masanori Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
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Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film. Comparison of the emission from a 520 nm film and of bulk GaAs in reflection geometry reveals that the main THz radiation mechanism is the photo-Dember effect. Moreover, comparing the emission from bulk InAs, the thin films can also be categorized as strong THz emitters. |
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Que, Christopher T. Edamura, Tadataka Nakajima, M Tani, Masahiko Hangyo, Masanori |
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Que, Christopher T. Edamura, Tadataka Nakajima, M Tani, Masahiko Hangyo, Masanori |
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Que, Christopher T. |
title |
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
title_short |
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
title_full |
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
title_fullStr |
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
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Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses |
title_sort |
terahertz radiation from inas films on silicon substrates excited by femtosecond laser pulses |
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Animo Repository |
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2009 |
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https://animorepository.dlsu.edu.ph/faculty_research/11910 |
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