Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

• Main Authors: Sadia, Cyril P, Lopez, Lorenzo P, Jr, Delos Santos, Ramon M, Muldera, Joselito E, De Los Reyes, Alexander E, Tumanguil, Mae Agatha C, Que, Christopher T, Magusara, Valynn Katrine, Tani, Masahiko, Somintac, Armando S, Estacio, Elmer S, Salvado, Arnel A
• Format: text
• Published: Archīum Ateneo 2018
• Subjects: Molecular beam epitaxy; III-V semiconductors; Indium arsenide; Terahertz; Physics
• Online Access: https://archium.ateneo.edu/physics-faculty-pubs/52; https://www.sciencedirect.com/science/article/abs/pii/S0040609017309276
• Institution: Ateneo De Manila University

We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial gr...