Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial gr...
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Main Authors: | Sadia, Cyril P, Lopez, Lorenzo P, Jr, Delos Santos, Ramon M, Muldera, Joselito E, De Los Reyes, Alexander E, Tumanguil, Mae Agatha C, Que, Christopher T, Magusara, Valynn Katrine, Tani, Masahiko, Somintac, Armando S, Estacio, Elmer S, Salvado, Arnel A |
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Format: | text |
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Archīum Ateneo
2018
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Online Access: | https://archium.ateneo.edu/physics-faculty-pubs/52 https://www.sciencedirect.com/science/article/abs/pii/S0040609017309276 |
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Institution: | Ateneo De Manila University |
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