Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial gr...
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2018
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ph-ateneo-arc.physics-faculty-pubs-10512020-06-09T08:49:55Z Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation Sadia, Cyril P Lopez, Lorenzo P, Jr Delos Santos, Ramon M Muldera, Joselito E De Los Reyes, Alexander E Tumanguil, Mae Agatha C Que, Christopher T Magusara, Valynn Katrine Tani, Masahiko Somintac, Armando S Estacio, Elmer S Salvado, Arnel A We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. 2018-02-01T08:00:00Z text https://archium.ateneo.edu/physics-faculty-pubs/52 https://www.sciencedirect.com/science/article/abs/pii/S0040609017309276 Physics Faculty Publications Archīum Ateneo Molecular beam epitaxy III-V semiconductors Indium arsenide Terahertz Physics |
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Molecular beam epitaxy III-V semiconductors Indium arsenide Terahertz Physics |
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Molecular beam epitaxy III-V semiconductors Indium arsenide Terahertz Physics Sadia, Cyril P Lopez, Lorenzo P, Jr Delos Santos, Ramon M Muldera, Joselito E De Los Reyes, Alexander E Tumanguil, Mae Agatha C Que, Christopher T Magusara, Valynn Katrine Tani, Masahiko Somintac, Armando S Estacio, Elmer S Salvado, Arnel A Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
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We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. |
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Sadia, Cyril P Lopez, Lorenzo P, Jr Delos Santos, Ramon M Muldera, Joselito E De Los Reyes, Alexander E Tumanguil, Mae Agatha C Que, Christopher T Magusara, Valynn Katrine Tani, Masahiko Somintac, Armando S Estacio, Elmer S Salvado, Arnel A |
author_facet |
Sadia, Cyril P Lopez, Lorenzo P, Jr Delos Santos, Ramon M Muldera, Joselito E De Los Reyes, Alexander E Tumanguil, Mae Agatha C Que, Christopher T Magusara, Valynn Katrine Tani, Masahiko Somintac, Armando S Estacio, Elmer S Salvado, Arnel A |
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Sadia, Cyril P |
title |
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
title_short |
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
title_full |
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
title_fullStr |
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
title_full_unstemmed |
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
title_sort |
epitaxial growth of p-inas on gasb with intense terahertz emission under 1.55-μm femtosecond laser excitation |
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Archīum Ateneo |
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2018 |
url |
https://archium.ateneo.edu/physics-faculty-pubs/52 https://www.sciencedirect.com/science/article/abs/pii/S0040609017309276 |
_version_ |
1722366475272978432 |