Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. F...

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Main Authors: De Los Reyes, Alexander, Prieto, Elizabeth Ann, Omambac, Karim, Porquez, Jeremy, Lopez, Lorenzo P., Gonzales, Karl Cedric, Vasquez, John Daniel, Tumanguil, Mae Agatha, Joselito, Joselito, Yamamoto, Kohji, Tani, Masahiko, Somintac, Armando, Estacio, Elmer, Salvador, Arnel
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Online Access:https://animorepository.dlsu.edu.ph/faculty_research/3297
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-42632023-01-06T01:47:45Z Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field De Los Reyes, Alexander Prieto, Elizabeth Ann Omambac, Karim Porquez, Jeremy Lopez, Lorenzo P. Gonzales, Karl Cedric Vasquez, John Daniel Tumanguil, Mae Agatha Joselito, Joselito Yamamoto, Kohji Tani, Masahiko Somintac, Armando Estacio, Elmer Salvador, Arnel We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the Bup and Bdown-related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs. © 2017 Elsevier B.V. 2017-04-01T07:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/3297 Faculty Research Work Animo Repository Gallium arsenide Molecular beam epitaxy Terahertz spectroscopy Physics
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Gallium arsenide
Molecular beam epitaxy
Terahertz spectroscopy
Physics
spellingShingle Gallium arsenide
Molecular beam epitaxy
Terahertz spectroscopy
Physics
De Los Reyes, Alexander
Prieto, Elizabeth Ann
Omambac, Karim
Porquez, Jeremy
Lopez, Lorenzo P.
Gonzales, Karl Cedric
Vasquez, John Daniel
Tumanguil, Mae Agatha
Joselito, Joselito
Yamamoto, Kohji
Tani, Masahiko
Somintac, Armando
Estacio, Elmer
Salvador, Arnel
Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
description We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the Bup and Bdown-related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs. © 2017 Elsevier B.V.
format text
author De Los Reyes, Alexander
Prieto, Elizabeth Ann
Omambac, Karim
Porquez, Jeremy
Lopez, Lorenzo P.
Gonzales, Karl Cedric
Vasquez, John Daniel
Tumanguil, Mae Agatha
Joselito, Joselito
Yamamoto, Kohji
Tani, Masahiko
Somintac, Armando
Estacio, Elmer
Salvador, Arnel
author_facet De Los Reyes, Alexander
Prieto, Elizabeth Ann
Omambac, Karim
Porquez, Jeremy
Lopez, Lorenzo P.
Gonzales, Karl Cedric
Vasquez, John Daniel
Tumanguil, Mae Agatha
Joselito, Joselito
Yamamoto, Kohji
Tani, Masahiko
Somintac, Armando
Estacio, Elmer
Salvador, Arnel
author_sort De Los Reyes, Alexander
title Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
title_short Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
title_full Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
title_fullStr Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
title_full_unstemmed Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
title_sort terahertz emission characteristics of gamnas dilute magnetic semiconductor under 650 mt external magnetic field
publisher Animo Repository
publishDate 2017
url https://animorepository.dlsu.edu.ph/faculty_research/3297
_version_ 1754713726009737216