Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer

Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer

Broadband ultraviolet–visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet–visible photodetection. In this work, a mono...

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Bibliographic Details
Main Authors: Liao, Yikai, Zheng, Yixiong, Shin, Sang-Ho, Zhao, Zhi-Jun, An, Shu, Seo, Jung-Hun, Jeong, Jun-Ho, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Antireflective
Gallium Arsenide
Online Access:https://hdl.handle.net/10356/156828
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/156828

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