Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer

• المؤلفون الرئيسيون: Liao, Yikai, Zheng, Yixiong, Shin, Sang-Ho, Zhao, Zhi-Jun, An, Shu, Seo, Jung-Hun, Jeong, Jun-Ho, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Antireflective; Gallium Arsenide
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156828

Broadband ultraviolet–visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet–visible photodetection. In this work, a mono...