Six-parameter DC GaAs FET model for nonlinear circuit simulation

• Main Authors: Cao, J., Lin, F., Kooi, P.S., Leong, M.S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Field effect transistors; Gallium arsenide; Semiconductor device models
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81192
• Institution: National University of Singapore

Electronics Letters