$Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]$

Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

10.1016/S0039-6028(02)01918-0

Saved in:

Bibliographic Details
Main Authors:	Tok, E.S., Neave, J.H., Zhang, J.
Other Authors:	MATERIALS SCIENCE
Format:	Article
Published:	2014
Subjects:	Epitaxy Gallium arsenide Low index single crystal surfaces Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/106986
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Be the first to leave a comment!

Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]

Similar Items