Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy

10.1016/S0039-6028(03)00535-1

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Bibliographic Details
Main Authors:	Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S.
Other Authors:	MATERIALS SCIENCE
Format:	Article
Published:	2014
Subjects:	Growth Indium phosphide Molecular beam epitaxy Semiconducting surfaces
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/107167
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Institution:	National University of Singapore

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