One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

• Main Authors: Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting indium phosphide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82823
• Institution: National University of Singapore

10.1016/j.jcrysgro.2007.04.024