One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

10.1016/j.jcrysgro.2007.04.024

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Bibliographic Details
Main Authors:	Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	A1. Nanostructures A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B2. Semiconducting III-V materials B2. Semiconducting indium phosphide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82823
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82823
record_format	dspace
spelling	sg-nus-scholar.10635-828232024-11-14T02:29:25Z One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application Teng, J.H. Dong, J.R. Chong, L.F. Chua, S.J. Wang, Y.J. Chen, A. ELECTRICAL & COMPUTER ENGINEERING SINGAPORE SYNCHROTRON LIGHT SOURCE A1. Nanostructures A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B2. Semiconducting III-V materials B2. Semiconducting indium phosphide 10.1016/j.jcrysgro.2007.04.024 Journal of Crystal Growth 305 1 45-49 JCRGA 2014-10-07T04:33:55Z 2014-10-07T04:33:55Z 2007-07-01 Article Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A. (2007-07-01). One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application. Journal of Crystal Growth 305 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.04.024 00220248 http://scholarbank.nus.edu.sg/handle/10635/82823 000247841300010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. Nanostructures A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B2. Semiconducting III-V materials B2. Semiconducting indium phosphide
spellingShingle	A1. Nanostructures A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B2. Semiconducting III-V materials B2. Semiconducting indium phosphide Teng, J.H. Dong, J.R. Chong, L.F. Chua, S.J. Wang, Y.J. Chen, A. One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
description	10.1016/j.jcrysgro.2007.04.024
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Teng, J.H. Dong, J.R. Chong, L.F. Chua, S.J. Wang, Y.J. Chen, A.
format	Article
author	Teng, J.H. Dong, J.R. Chong, L.F. Chua, S.J. Wang, Y.J. Chen, A.
author_sort	Teng, J.H.
title	One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
title_short	One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
title_full	One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
title_fullStr	One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
title_full_unstemmed	One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
title_sort	one-dimensional aligned inas/inp quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82823
_version_	1821229442435907584

One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

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