Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

10.1016/j.jcrysgro.2004.12.020

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Bibliographic Details
Main Authors: Cheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Subjects:
A1. High resolution X-ray diffraction
A1. Photoluminescence
A1. Secondary ion mass spectroscopy
A3. Molecular beam epitaxy
B1. GaAsN
B1. InGaAsN
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115159
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/115159

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