Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

• Main Authors: Cheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S.
• 其他作者: INSTITUTE OF ENGINEERING SCIENCE
• 格式: Article
• 出版: 2014
• 主題: A1. High resolution X-ray diffraction; A1. Photoluminescence; A1. Secondary ion mass spectroscopy; A3. Molecular beam epitaxy; B1. GaAsN; B1. InGaAsN
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/115159

10.1016/j.jcrysgro.2004.12.020