Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

10.1016/j.jcrysgro.2004.12.020

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Bibliographic Details
Main Authors:	Cheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Article
Published:	2014
Subjects:	A1. High resolution X-ray diffraction A1. Photoluminescence A1. Secondary ion mass spectroscopy A3. Molecular beam epitaxy B1. GaAsN B1. InGaAsN
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/115159
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-115159
record_format	dspace
spelling	sg-nus-scholar.10635-1151592023-10-26T10:21:59Z Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy Cheah, W.K. Fan, W.J. Yoon, S.F. Ng, T.K. Loke, W.K. Zhang, D.H. Mei, T. Liu, R. Wee, A.T.S. INSTITUTE OF ENGINEERING SCIENCE PHYSICS A1. High resolution X-ray diffraction A1. Photoluminescence A1. Secondary ion mass spectroscopy A3. Molecular beam epitaxy B1. GaAsN B1. InGaAsN 10.1016/j.jcrysgro.2004.12.020 Journal of Crystal Growth 275 3-4 440-447 JCRGA 2014-12-12T07:11:51Z 2014-12-12T07:11:51Z 2005-03-01 Article Cheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S. (2005-03-01). Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy. Journal of Crystal Growth 275 (3-4) : 440-447. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.12.020 00220248 http://scholarbank.nus.edu.sg/handle/10635/115159 000228116800010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. High resolution X-ray diffraction A1. Photoluminescence A1. Secondary ion mass spectroscopy A3. Molecular beam epitaxy B1. GaAsN B1. InGaAsN
spellingShingle	A1. High resolution X-ray diffraction A1. Photoluminescence A1. Secondary ion mass spectroscopy A3. Molecular beam epitaxy B1. GaAsN B1. InGaAsN Cheah, W.K. Fan, W.J. Yoon, S.F. Ng, T.K. Loke, W.K. Zhang, D.H. Mei, T. Liu, R. Wee, A.T.S. Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
description	10.1016/j.jcrysgro.2004.12.020
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Cheah, W.K. Fan, W.J. Yoon, S.F. Ng, T.K. Loke, W.K. Zhang, D.H. Mei, T. Liu, R. Wee, A.T.S.
format	Article
author	Cheah, W.K. Fan, W.J. Yoon, S.F. Ng, T.K. Loke, W.K. Zhang, D.H. Mei, T. Liu, R. Wee, A.T.S.
author_sort	Cheah, W.K.
title	Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
title_short	Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
title_full	Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
title_fullStr	Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
title_full_unstemmed	Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
title_sort	investigation of n incorporation in ingaas and gaas epilayers on gaas using solid source molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/115159
_version_	1781789354058842112

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

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