MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation

MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation

10.1016/S0022-0248(02)01304-0

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Bibliographic Details
Main Authors: Zhou, W., Chua, S.J., Dong, J.R., Teng, J.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
A1. Localization and activation energy
A1. Photoluminescence
A2. Metalorganic chemical vapor deposition
A3. Quantum wells
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56651
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/56651

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