MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation

10.1016/S0022-0248(02)01304-0

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Bibliographic Details
Main Authors:	Zhou, W., Chua, S.J., Dong, J.R., Teng, J.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	A1. Localization and activation energy A1. Photoluminescence A2. Metalorganic chemical vapor deposition A3. Quantum wells
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56651
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Institution:	National University of Singapore

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