Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field

Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field

10.1016/j.jcrysgro.2004.04.084

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Bibliographic Details
Main Authors: Zhang, X.H., Liu, W., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
A1. Photoluminescence
A1. Time-resolved photoluminescence
A3. Quantum wells
B1. Indium gallium nitride
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71279
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71279

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