Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

10.1016/j.jcrysgro.2006.11.281

Saved in:
Bibliographic Details
Main Authors: Liu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
A1. High-resolution X-ray diffraction
A1. Rapid thermal annealing
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55118
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55118

Similar Items