Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

10.1016/j.jcrysgro.2005.12.114

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Bibliographic Details
Main Authors: Liu, H.F., Xiang, N., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
A1. High-resolution X-ray diffraction
A1. Rapid thermal annealing
A3. Molecular beam expitaxy
B1. Dilute nitrites
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81974
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81974

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