Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

10.1016/j.jcrysgro.2005.12.114

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Main Authors:	Liu, H.F., Xiang, N., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam expitaxy B1. Dilute nitrites
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81974
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81974
record_format	dspace
spelling	sg-nus-scholar.10635-819742023-10-29T22:26:48Z Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy Liu, H.F. Xiang, N. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam expitaxy B1. Dilute nitrites 10.1016/j.jcrysgro.2005.12.114 Journal of Crystal Growth 290 1 24-28 JCRGA 2014-10-07T04:23:53Z 2014-10-07T04:23:53Z 2006-04-15 Article Liu, H.F., Xiang, N., Chua, S.J. (2006-04-15). Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy. Journal of Crystal Growth 290 (1) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.114 00220248 http://scholarbank.nus.edu.sg/handle/10635/81974 000236656600005 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam expitaxy B1. Dilute nitrites
spellingShingle	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam expitaxy B1. Dilute nitrites Liu, H.F. Xiang, N. Chua, S.J. Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
description	10.1016/j.jcrysgro.2005.12.114
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, H.F. Xiang, N. Chua, S.J.
format	Article
author	Liu, H.F. Xiang, N. Chua, S.J.
author_sort	Liu, H.F.
title	Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
title_short	Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
title_full	Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
title_fullStr	Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
title_full_unstemmed	Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
title_sort	annealing behavior of n-bonding configurations in gan 0.023as0.977 ternary alloy grown on gaas (0 0 1) substrate by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81974
_version_	1781784029643669504

Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

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