Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

• Main Authors: Liu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: A1. High-resolution X-ray diffraction; A1. Rapid thermal annealing; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55118
• Institution: National University of Singapore

10.1016/j.jcrysgro.2006.11.281