Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

10.1016/j.jcrysgro.2006.11.281

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Bibliographic Details
Main Authors:	Liu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam epitaxy B2. Semiconducting III-V materials
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55118
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-55118
record_format	dspace
spelling	sg-nus-scholar.10635-551182024-11-13T08:37:43Z Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy Liu, H.F. Xiang, N. Zhou, H.L. Chua, S.J. Yang, P. Moser, H.O. ELECTRICAL & COMPUTER ENGINEERING SINGAPORE SYNCHROTRON LIGHT SOURCE A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam epitaxy B2. Semiconducting III-V materials 10.1016/j.jcrysgro.2006.11.281 Journal of Crystal Growth 301-302 SPEC. ISS. 548-551 JCRGA 2014-06-17T02:39:23Z 2014-06-17T02:39:23Z 2007-04 Article Liu, H.F., Xiang, N., Zhou, H.L., Chua, S.J., Yang, P., Moser, H.O. (2007-04). Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 548-551. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.11.281 00220248 http://scholarbank.nus.edu.sg/handle/10635/55118 000246015800126 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam epitaxy B2. Semiconducting III-V materials
spellingShingle	A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam epitaxy B2. Semiconducting III-V materials Liu, H.F. Xiang, N. Zhou, H.L. Chua, S.J. Yang, P. Moser, H.O. Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
description	10.1016/j.jcrysgro.2006.11.281
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, H.F. Xiang, N. Zhou, H.L. Chua, S.J. Yang, P. Moser, H.O.
format	Article
author	Liu, H.F. Xiang, N. Zhou, H.L. Chua, S.J. Yang, P. Moser, H.O.
author_sort	Liu, H.F.
title	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
title_short	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
title_full	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
title_fullStr	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
title_full_unstemmed	Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
title_sort	anneal-induced structural changes of gain(n)as/ga(n)as multiple quantum wells grown by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55118
_version_	1821219843509059584

Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

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