Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

10.1016/j.jcrysgro.2013.08.016

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Bibliographic Details
Main Authors: Ho, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
A1. AlN
A1. InGaN
A1. Suppression of phase separation
A3. Metal organic chemical vapour deposition
B2. Semiconducting III-V materials
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83094
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83094

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