Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

10.1016/j.jcrysgro.2013.08.016

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書目詳細資料
Main Authors:	Ho, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	A1. AlN A1. InGaN A1. Suppression of phase separation A3. Metal organic chemical vapour deposition B2. Semiconducting III-V materials
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83094
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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