Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

• Main Authors: Ho, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: A1. AlN; A1. InGaN; A1. Suppression of phase separation; A3. Metal organic chemical vapour deposition; B2. Semiconducting III-V materials
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83094
• Institution: National University of Singapore

10.1016/j.jcrysgro.2013.08.016