Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

10.1016/j.jcrysgro.2013.08.016

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Main Authors:	Ho, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	A1. AlN A1. InGaN A1. Suppression of phase separation A3. Metal organic chemical vapour deposition B2. Semiconducting III-V materials
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83094
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83094
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spelling	sg-nus-scholar.10635-830942024-11-14T02:29:46Z Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates Ho, J.W. Zhang, L. Wee, Q. Tay, A.A.O. Heuken, M. Chua, S.-J. ELECTRICAL & COMPUTER ENGINEERING PHYSICS MECHANICAL ENGINEERING A1. AlN A1. InGaN A1. Suppression of phase separation A3. Metal organic chemical vapour deposition B2. Semiconducting III-V materials 10.1016/j.jcrysgro.2013.08.016 Journal of Crystal Growth 383 1-8 JCRGA 2014-10-07T04:37:12Z 2014-10-07T04:37:12Z 2013 Article Ho, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J. (2013). Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates. Journal of Crystal Growth 383 : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2013.08.016 00220248 http://scholarbank.nus.edu.sg/handle/10635/83094 000326049000001 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. AlN A1. InGaN A1. Suppression of phase separation A3. Metal organic chemical vapour deposition B2. Semiconducting III-V materials
spellingShingle	A1. AlN A1. InGaN A1. Suppression of phase separation A3. Metal organic chemical vapour deposition B2. Semiconducting III-V materials Ho, J.W. Zhang, L. Wee, Q. Tay, A.A.O. Heuken, M. Chua, S.-J. Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
description	10.1016/j.jcrysgro.2013.08.016
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ho, J.W. Zhang, L. Wee, Q. Tay, A.A.O. Heuken, M. Chua, S.-J.
format	Article
author	Ho, J.W. Zhang, L. Wee, Q. Tay, A.A.O. Heuken, M. Chua, S.-J.
author_sort	Ho, J.W.
title	Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
title_short	Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
title_full	Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
title_fullStr	Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
title_full_unstemmed	Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
title_sort	structural and morphological qualities of ingan grown via elevated pressures in mocvd on aln/si(111) substrates
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83094
_version_	1821208049798348800

Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

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