High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate

High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate

10.1109/JEDS.2019.2915341

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Bibliographic Details
Main Authors: Lei, D., Han, K., Wu, Y., Liu, Z., Gong, X.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:
AlN/Si
Ga2O3
MOSFETs
self-heating effect
Online Access:https://scholarbank.nus.edu.sg/handle/10635/209614
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/209614

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