High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate

High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate

10.1109/JEDS.2019.2915341

Saved in:
Bibliographic Details
Main Authors: Lei, D., Han, K., Wu, Y., Liu, Z., Gong, X.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:
AlN/Si
Ga2O3
MOSFETs
self-heating effect
Online Access:https://scholarbank.nus.edu.sg/handle/10635/209614
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items

Similar Items