Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study
We present an ab initio study of dopant–dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional–substitutional interactions could be neglected. On the other hand, i...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/88630 http://hdl.handle.net/10220/44673 |
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| Institution: | Nanyang Technological University |
| Language: | English |