Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction

Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction

10.1109/SNW.2010.5562594

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Bibliographic Details
Main Authors: Han, G., Yee, Y.S., Guo, P., Yang, Y., Fan, L., Zhan, C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83706
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83706

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