Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction

• Main Authors: Han, G., Yee, Y.S., Guo, P., Yang, Y., Fan, L., Zhan, C., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83706
• Institution: National University of Singapore

10.1109/SNW.2010.5562594